| PART |
Description |
Maker |
| MGFC40V6472 |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
6.4- 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET 6.4 - 7.2GHz频段10W的内部匹配砷化镓场效应管
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| MGFC40V6472_04 MGFC40V6472 MGFC40V647204 |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PA7006 |
3.8?.2GHz 10W 40dB SOLID STATE POWER AMPLIFIER
|
MTRONPTI
|
| MGFC39V6472A |
6.4-7.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC36V3742A04 MGFC36V3742A |
3.7 ~ 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V6472A |
6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC45V3642A C453642A |
3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET 3.6 - 4.2GHz波段32W内部匹配砷化镓场效应
From old datasheet system
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| 2SC4805 |
Silicon NPN epitaxial planer type(For 2GHz band low-noise amplification)
|
PANASONIC[Panasonic Semiconductor]
|
| MGFC40V7177 |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7785 |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
